MMDL101 Datasheet, PDF (2/3 Pages) E-Tech Electronics LTD – Schottky Barrier Diode

TYPICAL CHARACTERISTICS
MMDL101T1
1.0
0.7
0.5
V _R = 3.0 Vdc
0.2
0.1
0.07
0.05
0.02
0.01
30
MMBD110T1
40 50 60 70 80 90 100 110 120 130
T _A , AMBIENT TEMPERATURE (°C)
Figure 1. Reverse Leakage
100
10
T A = 85°C
T _A = –40°C
1.0
0.1
0.3
T _A = 25°C
MMBD110T1
0.4
0.5
0.6
0.7
0.8
V _F , FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0
0.9
0.8
0.7
0.6
0
MMBD110T1
1.0
2.0
3.0
4.0
V _R , REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
11
10
9
8
7
6
5
4
3
2
1
0.1
LOCAL OSCILLATOR FREQUENCY = 1.0GHz
(Test Circuit Figure 5)
MMBD110T1
0.2
0.5
1.0
2.0
5.0
10
P _LO , LOCAL OSCILLATOR POWER (mW)
Figure 4. Noise Figure
UHF
NOISE SOURCE
H.P. 349A
LOCAL
OSCILLATOR
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
Figure 5. Noise Figure Test Circuit
NOTES ON TESTING AND SPECIFICATIONS
Note1—C _C andC T are measured using a capacitance
bridge(Boonton Electronics Model 75A or
equivalent).
Note2—Noise figure measured with diode under test in
tuned diode mount using UHF noise source and
local oscillator (LO) frequency of 1.0 GHz.The
LO power is adjusted for 1.0 mW. I _F amplifier
NF = 1.5 dB, f = 30MHz, see Figure 5.
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