MMDL101 Datasheet, PDF (1/3 Pages) E-Tech Electronics LTD – Schottky Barrier Diode

Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency
UHF and VHF detector applications. Readily available to many
other fast switching RF and digital applications.
• Very Low Capacitance — Less than 1.0 pF @ Zero Volts
• Low Noise Figure — 6.0 dB Typ @ 1.0 GHz
• Device Marking: 4M
MMDL101T1
1.0 pF SCHOTTKY
BARRIER DIODE
1
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Symbol
V_R
Rating
Reverse Voltage
Value
7.0
2
PLASTIC SOD– 323
CASE 477
Unit
Vdc
THERMAL CHARACTERISTICS
Symbol
P_D
R _θJA
T _J , T _stg
Characteristic
Total Device Dissipation FR–5 Board,*
T _A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
*FR–5 Minimum Pad
Max
200
1.57
635
–55 to+150
Device
MMDL101T1
ORDERING INFORMATION
Package
SOD–323
Shipping
3000 / Tape & Reel
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(I _R = 10 µA)
V _(BR)R
7.0
Diode Capacitance
(V _R = 0, f = 1.0MHz, Note 1)
C_T
—
Reverse Leakage
(V _R = 3.0 V)
I_R
—
Noise Figure
(f = 1.0 GHz, Note 2)
NF
—
Forward Voltage
(I _F = 10 mA)
V_F
—
*Notes on Next Page
Typ
10
0.88
20
6.0
0.5
Max
—
1.0
250
—
0.6
Unit
Volts
pF
nAdc
dB
Vdc
S1–1/3