MMBV809 Datasheet, PDF (2/2 Pages) E-Tech Electronics LTD – Silicon Tuning Diode

M M B V 8 0 9 LT 1
TYPICAL CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
0.5 1
2 345
8 10
15
V _R , REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1000
V _R =3Vdc
T_A = 25°C
100
10
10
100
1000
f , FREQUENCY ( GHz )
Figure 2. Figure of Merit
1000
V R= 3.0Vdc
f = 1.0MHz
800
600
400
0
0.2
0.4
0.6
0.8
1.0
1.2
f , FREQUENCY ( GHz )
Figure 3. Series Resistance
1.04
1.03
V R= 3.0Vdc
f = 1.0MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
–75 –50 –25
0
+25 +50 +75 +100 +125
T _A , AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
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