MMBV809 Datasheet, PDF (1/2 Pages) E-Tech Electronics LTD – Silicon Tuning Diode

Silicon Tuning Diode
This device is designed for 900 MHz frequency control
and tuning applications. It provides solid–state reliability in
replacement of mechanical tuning methods.
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
• Available in 8 mm Tape and Reel
1
ANODE
(
3
CATHODE
MMBV809LT1
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
Reverse Voltage
V_R
Forward Current
I_F
Device Dissipation⁽¹⁾ @T _A = 25°C
P_D
Derate above 25°C
Junction Temperature
T_J
Storage Temperature Range
T _stg
Value
20
20
225
1.8
+125
–55 to +150
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
DEVICE MARKING
MMBV809LT1=5K
ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(I_R=10µAdc)
Reverse Voltage Leakage Current
(V_R=15Vdc)
V _(BR)R
20
I_R
—
Max
—
50
Unit
Vdc
nAdc
Device Type
C_TDiode Capacitance
V_R=2.0Vdc,f=1.0MHz
pF
Q,Figure of Merit
V_R=3.0Vdc
f=500MHz
C_R,Capacitance Ratio
C₂/C₈
f=1.0MHz(2)
Min
Typ
Max
Typ
MMBV809LT1
4.5
5.3
6.1
75
1. FR-5 Board 1.0 x 0.75 x 0.62 in.
2. C_R is the ratio of C_t measured at 2.0 Vdc divided by C_t measured at 8.0 vdc
Min
Max
1.8
2.6
I5–1/2