MMBV409 Datasheet, PDF (2/2 Pages) E-Tech Electronics LTD – Silicon Tuning Diode

MMBV409LT1 MV409
TYPICAL CHARACTERISTICS
40
32
f = 1.0MHz
24
T_A = 25°C
16
8
0
1
23
10
20 30
100
V _R , REVERSE VOLTAGE (VOLTS)
Figure 1. Diode Capacitance
1000
V _R =3Vdc
T_A = 25°C
100
10
10
100
1000
f , FREQUENCY ( MHz )
Figure 2. Figure of Merit
100
60
20
10
6.0
2.0
1.0
0.6
0.2
0.1
0.06
0.02
0.01
0.006
0.002
0.001
–60 –40
V R= 15Vdc
–20 0 +20 +40 +60 +80 +100 +120 +140
T _A , AMBIENT TEMPERATURE (°C)
Figure 3. Leakage Current
1.04
1.03
V R= 3.0Vdc
f = 1.0MHz
1.02
1.01
1.00
0.99
0.98
0.97
0.96
–75 –50 –25
0
+25 +50 +75 +100 +125
T _A , AMBIENT TEMPERATURE (°C)
Figure 4. Diode Capacitance
I2–2/2