MMBV409 Datasheet, PDF (1/2 Pages) E-Tech Electronics LTD – Silicon Tuning Diode

Silicon Tuning Diode
This device is designed in the surface Mount package for general frequency
control and tuning applications.It provides solid-state reliability in replacement of
mechanical tuning methods.
• High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
3
CATHODE
1
ANODE
MMBV409LT1
MV409
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol M B V 4 0 9 MMBV409LT1 Unit
Reverse Voltage
Forward Current
Device Dissipation @T _A = 25°C
Derate above 25°C
V_R
20
20
Vdc
I_F
200
200
mAdc
P_D
280
225
mW
2.8
1.8
mW/°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
T_J
+125
°C
T _stg
–55 to +150
°C
MMBV409LT1=X5,MV409=MV409
ELECTRICAL CHARACTERISTICS(T_A=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Reverse Breakdown Voltage
(I_R=10µAdc)
V _(BR)R
20
—
Reverse Voltage Leakage Current
(V_R=15Vdc)
I_R
—
—
Diode Capacitance Temperature Coefficient
T _CC
—
300
Max
—
0.1
—
Unit
Vdc
µAdc
ppm/°C
Device Type
C_TDiode Capacitance
V_R=3.0Vdc,f=1.0MHz
pF
Q,Figure of Merit
C ,Capacitance
R
Ratio
V_R=3.0Vdc
f=50MHz
C₃/C₈
f=1.0MHz(1)
Min
N o m Max
MMBV409LT1,MV409
26
29
32
Min
Min
200
1.5
Max
1.9
1. C_R is the ratio of C_t measured at 3 Vdc divided by C_t measured at 8 vdc
I2–1/2