MBT3904DW Datasheet, PDF (2/10 Pages) E-Tech Electronics LTD – Dual General Purpose Transistors

MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(I C = 1.0 mAdc, I B = 0)
MBT3904DW1T1 (NPN)
(I C = –1.0 mAdc, I B = 0)
MBT3906DW1T1 (PNP)
Collector–Base Breakdown Voltage
(I C = 10 µAdc, I E = 0)
MBT3904DW1T1 (NPN)
(I C = –10 µAdc, I E = 0)
MBT3906DW1T1 (PNP)
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
MBT3904DW1T1 (NPN)
(I E = –10 µAdc, I C = 0)
MBT3906DW1T1 (PNP)
Base Cutoff Current
(V CE = 30 Vdc, V EB = 3.0 Vdc) MBT3904DW1T1 (NPN)
(V CE = –30 Vdc, V EB = –3.0 Vdc) MBT3906DW1T1 (PNP)
Collector Cutoff Current
(V CE = 30 Vdc, V EB = 3.0 Vdc) MBT3904DW1T1 (NPN)
(V CE = –30 Vdc, V EB = –3.0 Vdc) MBT3906DW1T1 (PNP)
ON CHARACTERISTICS (2)
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BL
I CEX
DC Current Gain
(I C = 0.1 mAdc, V _CE = 1.0 Vdc)
MBT3904DW1T1 (NPN)
(I _C = 1.0 mAdc, V _CE = 1.0 Vdc)
(I _C = 10 mAdc, V _CE = 1.0 Vdc)
(I _C = 50 mAdc, V _CE = 1.0 Vdc)
(I _C = 100 mAdc, V _CE = 1.0 Vdc)
(I _C = –0.1 mAdc, V _CE = –1.0 Vdc) MBT3906DW1T1 (PNP)
(I _C = –1.0 mAdc, V _CE = –1.0 Vdc)
(I _C = –10 mAdc, V _CE = –1.0 Vdc)
(I _C = –50 mAdc, V _CE = –1.0 Vdc)
(I _C = –100 mAdc, V _CE = –1.0 Vdc)
Collector–Emitter Saturation Voltage
(I _C = 10 mAdc, I _B = 1.0 mAdc)
(I _C = 50 mAdc, I _B = 5.0 mAdc)
(I _C = –10 mAdc, I _B = –1.0 mAdc)
(I _C = –50 mAdc, I _B = –5.0 mAdc)
Base–Emitter Saturation Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
(I C = 10 mAdc, I B = 1.0 mAdc) MBT3904DW1T1 (NPN)
h _FE
V _CE(sat)
V _BE(sat)
(I C = 50 mAdc, I B = 5.0 mAdc)
(I C = –10 mAdc, I B = –1.0 mAdc) MBT3906DW1T1 (PNP)
(I C = –50 mAdc, I B = –5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
fT
(I C = 10 mAdc, V CE = 20 Vdc,
MBT3904DW1T1 (NPN)
f = 100 MHz)
(I C = –10 mAdc, V CE = –20 Vdc,
f = 100 MHz)
MBT3906DW1T1 (PNP)
Output Capacitance
(V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN)
(V CB = –5.0 Vdc, I E = 0,
MBT3906DW1T1 (PNP)
f = 1.0 MHz)
C obo
Input Capacitance
C ibo
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) MBT3904DW1T1 (NPN)
(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz) MBT3906DW1T1 (PNP)
2. Pulse Test: Pulse Width < 300 ms; Duty Cycle< 2.0%.
Min
40
–40
60
–40
6.0
–5.0
—
—
—
—
40
70
100
60
30
60
80
100
60
30
—
—
—
—
0.65
—
–0.65
—
300
250
—
—
—
—
Max
—
—
—
—
—
—
50
–50
50
–50
—
—
—
—
—
—
—
—
—
—
0.2
0.3
– 0.25
–0.4
0.85
0.95
–0.85
–0.95
—
—
4.0
4.5
8.0
10.0
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
Vdc
Vdc
Vdc
MHz
pF
pF
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