MBT3904DW Datasheet, PDF (1/10 Pages) E-Tech Electronics LTD – Dual General Purpose Transistors

Dual General Purpose Transistors
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are
spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed
for general purpose amplifier applications and are housed in the SOT–363 six–leaded
surface mount package. By putting two discrete devices in one package, these devices
are ideal for low–power surface mount applications where board space is at a premium.
• h FE, 100–300
• Low VCE(sat) , 3 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
See Table
• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
6
5
4
6
5
4
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
6
5
4
1
2
3
SOT–363/SC–88
CASE 419B STYLE 1
6
5
4
Q₂
Q₁
Q₂
Q₁
Q₂
Q₁
1
2
3
MBT3904DW1T1
MAXIMUM RATINGS
1
2
3
MBT3906DW1T1
1
2
3
MBT3946DW1T1
*Q 1 same as MBT3906DW1T1
Q 2 same as MBT3904DW1T1
Rating
Symbol
Voltage
Unit
Collector–Emitter Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Collector–Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Emitter–Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Collector Current -Continuous
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Electrostatic Discharge
V CEO
V CBO
V EBO
IC
ESD
40
–40
60
–40
6.0
–5.0
200
–200
HBM>16000,
MM>2000
V
V
V
mAdc
V
THERMAL CHARACTERISTICS
ORDERING INFORMATION
Characteristic
Symbol
Max
Unit
Device
Package
Shipping
Total Device Dissipation(1)
TA = 25°C
Thermal Resistance,
Junction to Ambient
PD
R θJA
150
mW
833
°C/W
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
SOT–363
SOT–363
SOT–363
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
Junction and Storage
Temperature
T J , T stg –55 to +150
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
MBT3904–1/12