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GT2622 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
ISSUED DATE :2006/01/16
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
50
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
0.06
-
V/к Reference to 25к, ID=1mA
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
VGS(th) 1.0
-
3.0
V VDS=VGS, ID=250uA
gfs
-
600
-
mS VDS=10V, ID=500mA
IGSS
-
-
̈́30 uA VGS= ±20V
Drain-Source Leakage Current(Tj=25к)
-
-
10
uA VDS=50V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
100 uA VDS=40V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
-
1.8
VGS=10V, ID=500mA
-
3.2
VGS=4.5V, ID=200mA
1
1.6
ID=500mA
0.5
-
nC VDS=40V
0.5
-
VGS=4.5V
12
-
VDS=25V
10
-
ID=500mA
ns VGS=10V
56
-
RG=3.3
29
-
RD=50
32 50
VGS=0V
8
-
pF VDS=25V
6
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
1.3
Unit
Test Conditions
V IS=600mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, tЉ5sec; 250к/W when mounted on Min. copper pad.
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