GT2622 Datasheet, PDF (1/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2006/01/16
REVISED DATE :
GT2622
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
50V
1.8
520mA
Description
The GT2622 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial applications.
Features
*Low Gate Charge
*Surface Mount package
*RoHS Compliant
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS@10V
Continuous Drain Current³, V_GS@10V
Pulsed Drain Current¹
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
P_D @TA=25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
0.30 0.55
0 0.10
0° 10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Ratings
50
±20
520
410
1.5
0.8
0.006
-55 ~ +150
Value
150
Unit
V
V
mA
mA
A
W
W/к
к
Unit
к/W
1/4