GMCR100-6 Datasheet, PDF (2/3 Pages) E-Tech Electronics LTD – SENSIT IVE GAT E SILICON CONTROLLED RECT IFIERS REVERSE BLOCKING THYRISTORS 0. 8A, 400V

ISSUED DATE :2005/09/28
REVISED DATE :2006/03/29B
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-case
Junction-to-Ambient
Lead Solder Temperature (< 1/16” from case, 10 secs max)
Symbol
R JC
R JA
TL
Electrical Characteristics (TC = 25к unless otherwise noted)
Off Characteristics
Characteristic
Symbol
Min
Peak Repetitive Forward or Reverse Blocking Current (Note2)
TC=25к IDRM, IRRM
-
(VDRM=400V and VRRM=400V; RGK=1k )
TC=110к
On Characteristics
Peak Forward On-State Voltage* (ITM=1A Peak @TA=25к)
VTM
-
Gate Trigger Current (Continuous dc) (Note3)
(VAK=7.0 Vdc, RL=100 )
TC=25к
IGT
-
Holding Current (Note2)
(VAK=7.0 Vdc, Initiating Current=20mA)
TC=25к
TC=-40к
IH
-
Latch Current
(VAK=7.0 Vdc, Ig=200 A)
TC=25к
TC=-40к
IL
-
Gate Trigger Voltage (Continuous dc) (Note3)
(VAK=7.0 Vdc, RL=100 )
TC=25к
TC=-40к
VGT
-
Dynamic Characteristics
Critical Rate of Rise of Off-State Voltage
(VD=400V, Exponential Waveform, RGK=1000 , TJ=110к)
dV/dt
20
Critical Rate of Rise of Off-State Current
(IPK=20AV, PW=10 sec; diG/dt=1A/ sec, Igt=20mA)
di/dt
-
*Indicates Pulse Test: Pulse Width 1.0ms, Duty Cycle 1%.
Note 2.RGK=1000 included in measurement.
Note 3.Dose not include RGK in measurement.
Max
75
200
260
Typ
Max
-
10
100
-
1.7
50
100
0.5
5.0
-
10
0.6
10
-
15
0.62
0.8
-
1.2
35
-
-
50
Unit
к/W
к
Unit
A
V
A
mA
mA
V
V/ s
A/ s
Voltage Current Characteristic of SCR
Symbol
Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM
VRRM
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
IRRM
VTM
Peak Reverse Blocking Current
Peak On State Voltage
IH
Holding Current
GMCR100-6
Page: 2/3