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GC2307 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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CORPORATION ISSUED DATE :2005/06/20
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -16
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
-
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
-
-0.01
-
12
-
-
-
-1.0
-
±100
V VGS=0, ID=-250uA
V/к Reference to 25к, ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-5V, ID=-4A
nA VGS= ±8V
Drain-Source Leakage Current(Tj=25к)
-
-
-1
uA VDS=-16V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-25
uA VDS=-12V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
-
60
VGS=-4.5V, ID=-4A
-
70 m VGS=-2.5V, ID=-3.0A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
90
VGS=-1.8V, ID=-2.0A
-
15 24
ID=-4A
-
1.3
-
nC VDS=-12V
-
4
-
VGS=-4.5V
-
8
-
VDS=-10V
-
11
-
ID=-1A
ns VGS=-10V
-
54
-
RG=3.3
-
36
-
RD=10
-
985 1580
VGS=0V
-
180
-
pF VDS=-15V
-
160
-
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
39
26
Max.
-1.2
-
-
Unit
Test Conditions
V IS=-1.2A, VGS=0V
ns IS=-4A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
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