GC2307 Datasheet, PDF (1/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
CORPORATION ISSUED DATE :2005/06/20
REVISED DATE :
GC2307
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-16V
60m
-4.0A
Description
The GC2307 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The GC2307 is universally preferred for all commercial-industrial applications and suited for low voltage
applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Fast Switching
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
P_D @TA=25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ Max.
Symbol
Rthj-a
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Ratings
-16
±8
-4.0
-3.3
-12
1.38
0.01
-55 ~ +150
Unit
V
V
A
A
A
W
W/к
к
Ratings
90
Unit
ć/W
1/4