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| GC01L60 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2005/09/14
REVISED DATE :
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS 600
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
2.0
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=150к)
-
Static Drain-Source On-Resistance3 RDS(ON)
-
Total Gate Charge3
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Turn-on Delay Time3
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
Gate Resistance
Rg
-
-
-
V VGS=0, ID=1mA
0.8
-
V/к Reference to 25к, ID=1mA
-
4.0
V VDS=VGS, ID=250uA
0.8
-
S VDS=10V, ID=0.5A
-
Í100 nA VGS= Í30V
-
10
uA VDS=600V, VGS=0
-
100 uA VDS=480V, VGS=0
-
12
Ó¨ VGS=10V, ID=0.5A
5
8
ID=0.5A
1.5
-
nC VDS=480V
0.7
-
VGS=10V
8
-
VDD=300V
5
-
ID=1A
ns VGS=10V
13
-
RG=10Ó¨
9
-
RD=300Ó¨
260 420
20
-
3
-
VGS=0V
pF VDS=25V
f=1.0MHz
3
-
Ó¨ f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Reverse Recovery Time3
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
345
1
Max.
1.2
-
-
Unit
Test Conditions
V IS=160mA, VGS=0V
ns IS=1A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25к, VDD=50V, L=1mH, RG=25Ө, IAS=1A.
3. Pulse widthÐ300us, duty cycleÐ2%.
GC01L60
Page: 2/4
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