GC01L60 Datasheet, PDF (1/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2005/09/14
REVISED DATE :
GC01L60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
600V
12
160mA
Description
The GC01L06 utilized advanced processing techniques to achieve the possible on-resistance, extremely
efficient and cost-effectiveness device.
Features
*Simple Drive Requirement
*Low Gate Charge
*Fast Switching Characteristics
Package Dimensions
D
E
S1
TO-92
b1
S E A T IN G
PLANE
C
e1
b
e
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS@10V
Continuous Drain Current, V_GS@10V
Pulsed Drain Current¹
Total Power Dissipation
Single Pulse Avalanche Energy²
V_DS
V_GS
I_D @TA=25к
I_D @TA=100к
I_DM
P_D @TC=25к
E_AS
Avalanche Current
I_AR
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
600
f30
160
100
300
0.83
0.5
1
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient
Max.
Symbol
Rthj-a
Value
150
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Unit
V
V
mA
mA
mA
W
mJ
A
ć
Unit
ć/W
GC01L60
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