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G3401 Datasheet, PDF (2/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET
◁
CORPORATION ISSUED DATE :2006/08/31
REVISED DATE :
Electrical Characteristics (Tj = 25к unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS -30
-
-
V VGS=0, ID=-250uA
Gate Threshold Voltage
VGS(th) -0.7
-
-1.3
V VDS=VGS, ID=-250uA
Forward Transconductance
Gate-Source Leakage Current
gfs
IGSS
-
11
-
S VDS=-5V, ID=-5A
-
- ±100 nA VGS= ±12V
Drain-Source Leakage Current(Tj=25к)
-
-
-1
uA VDS=-24V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=55к)
-
-
-5
uA VDS=-24V, VGS=0
-
-
50
VGS=-10V, ID=-4.2A
Static Drain-Source On-Resistance RDS(ON) -
-
65 m VGS=-4.5V, ID=-4.0A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
120
VGS=-2.5V, ID=-1.0A
-
9.4
-
ID=-4A
-
2
-
nC VDS=-15V
-
3
-
VGS=-4.5V
-
6.3
-
-
3.2
-
- 38.2 -
-
12
-
VDS=-15V
ns VGS=-10V
RG=6
RL=3.6
-
954
-
-
115
-
-
77
-
VGS=0V
pF VDS=-15V
f=1.0MHz
Gate Resistance
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Rg
-
6
-
f=1.0MHz
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
20.2
11.2
Max.
-1.0
-
-
Unit
Test Conditions
V IS=-1.0A, VGS=0V
ns IS=-4A, VGS=0V
nC dI/dt=100A/ s
Continuous Source Current (Body Diode)
IS
-
-
-2.2
A VD=VG=0V, VS=-1.0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthЉ300us, duty cycleЉ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270к/W when mounted on Min. copper pad.
G3401
Page: 2/4
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