G3401 Datasheet, PDF (1/4 Pages) GTM CORPORATION – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
CORPORATION ISSUED DATE :2006/08/31
REVISED DATE :
G3401
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
50m
-4.2A
Description
The G3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and
cost-effectiveness device.
The G3401 is universally used for all commercial-industrial applications.
Features
*Lower Gate Charge
*Small Package Outline
*RoHS Compliant
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
P_D @TA=25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Ratings
-30
±12
-4.2
-3.5
-30
1.38
0.01
-55 ~ +150
Ratings
90
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Unit
V
V
A
A
A
W
W/к
к
Unit
к/W
G3401
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