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| G2302 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2004/07/06
REVISED DATE :2005/03/14B
Electrical Characteristics(Tj = 25Ä Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
Breakdown Voltage Temperature Coefficient ϦBVDSS /ϦTj
-
Gate Threshold Voltage
VGS(th)
0.5
Forward Transconductance
gfs
-
Gate-Source Leakage Current
IGSS
-
Drain-Source Leakage Current(Tj=25к)
-
IDSS
Drain-Source Leakage Current(Tj=70к)
-
-
-
V VGS=0, ID=250uA
0.1
-
V/к Reference to 25к, ID=1mA
-
1.2
V VDS=VGS, ID=250uA
6
-
S VDS=5V, ID=3.6A
-
Í100 nA VGS= Í12V
-
1
uA VDS=20V, VGS=0
-
10
uA VDS=20V, VGS=0
-
Static Drain-Source On-Resistance2 RDS(ON)
-
Total Gate Charge2
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (âMillerâ) Change
Turn-on Delay Time2
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
-
85
VGS=4.5V, ID=3.6A
mÓ¨
-
115
VGS=2.5V, ID=3.1A
4.4
-
ID=3.6A
0.6
-
nC VDS=10V
1.9
-
VGS=4.5V
5.2
-
37
-
15
-
5.7
-
VDS=10V
ID=3.6A
ns VGS=5V
RG=6Ó¨
RD=2.8Ó¨
145
-
100
-
50
-
VGS=0V
pF VDS=10V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.2
1
10
Unit
Test Conditions
V IS=1.6A, VGS=0V
A VD= VG=0V, VS=1.2V
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board;270к/W when mounted on min. copper pad.
2/4
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