G2302 Datasheet, PDF (1/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2004/07/06
REVISED DATE :2005/03/14B
G2302
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
Description
The G2302 provide the designer with best combination of fast switching, low on-resistance and
cost-effectiveness.
Features
*Capable of 2.5V gate drive
*Small Package Outline
Package Dimensions
20V
85m
3.2A
TPU.34)QBDLBHF*
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS@4.5V
Continuous Drain Current³, V_GS@4.5V
Pulsed Drain Current^1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @TA =25к
I_D @TA =70к
I_DM
P_D @TA =25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Ratings
20
f12
3.2
2.6
10
1.38
0.01
-55 ~ +150
Ratings
90
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0̓
10̓
Unit
V
V
A
A
A
W
W/ć
ć
Unit
ć/W
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