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| G138 Datasheet, PDF (2/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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ISSUED DATE :2006/03/01
REVISED DATE :
Electrical Characteristics (Tj = 25Ä unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
50
-
-
V VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th) 0.5
-
2.0
V VDS=VGS, ID=1mA
Forward Transconductance
Gate-Source Leakage Current
gfs
IGSS
-
500
-
mS VDS=10V, ID=220mA
-
-
Í100 nA VGS= Í20V
Drain-Source Leakage Current(Tj=25к) IDSS
-
-
1
uA VDS=50V, VGS=0
-
Static Drain-Source On-Resistance RDS(ON)
-
-
3.5
VGS=10V, ID=220mA
Ó¨
-
6.0
VGS=4.5V, ID=220mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Ciss
-
-
50
VGS=0V
Coss
-
-
25
pF VDS=25V
Crss
-
-
5
f=1.0MHz
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
1.5
Unit
Test Conditions
V IS=100mA, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse widthÐ300us, duty cycleÐ2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 270к/W when mounted on Min. copper pad.
2/4
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