G138 Datasheet, PDF (1/4 Pages) GTM CORPORATION – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product
ISSUED DATE :2006/03/01
REVISED DATE :
G138
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
50V
3.5
500mA
Description
The G138 has been designed to minimize on-state resistance, while provide rugged, reliable and fast switching
performance.
The G138 is universally used for all commercial-industrial surface mount applications.
Features
*Simple Drive Requirement
*Small Package Outline
Package Dimensions
TPU.34)QBDLBHF*
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS@10V
Continuous Drain Current³, V_GS@10V
Pulsed Drain Current^1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D @TA=25к
I_D @TA=70к
I_DM
P_D @TA=25к
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient³ Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0
0.10
0.45 0.55
REF.
G
H
K
J
L
M
Ratings
50
±20
500
400
800
225
0.002
-55 ~ +150
Value
556
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Unit
V
V
mA
mA
mA
mW
W/к
к
Unit
к/W
1/4