SLN08G72G2BA2HY-CCRT Datasheet, PDF (8/17 Pages) List of Unclassifed Manufacturers – 8GB DDR3L – SDRAM ECC SO-DIMM

preliminary Data Sheet
Rev.0.9 03.06.2013
Parameter
max.
& Test Condition
Symbol 12800-CL11
10600-CL9 Unit
OPERATING WRITE CURRENT:
I_DD4W
882
All device banks open, Continuous burst writes; One
module rank active; BL = 4, CL = CL (I_DD), AL = 0;
t_CK = t_CK (I_DD), t_RAS = t_RAS MAX (I_DD), t_RP = t_RP (I_DD);
CKE is HIGH, CS# is HIGH between valid commands;
Address bus inputs are changing once every two clock
cycles; DQ inputs changing once per clock cycle
792
mA
BURST REFRESH CURRENT:
I_DD5
t_CK = t_CK (I_DD); refresh command at every t_RFC (I_DD)
interval, CKE is HIGH, CS# is HIGH between valid
commands; All other Control and Address bus inputs
are changing once every two clock cycles; DQ inputs
changing once per clock cycle
1872
1872
mA
SELF REFRESH CURRENT:
CK and CK# at 0V; CKE ≤ 0.2V; All other Control and
I_DD6
Address bus inputs are floating at V_REF; DQ’s are
floating at V_REF
OPERATING CURRENT*) :
I_DD7
Four device bank interleaving READs, I_OUT = 0mA; BL = 4,
CL = CL (I_DD), AL = t_RCD (I_DD) – 1 x t_CK (I_DD); t_CK = t_CK
(I_DD), t_RC = t_RC (I_DD), t_RRD = t_RRD (I_DD), t_RCD = t_RCD (I_DD);
CKE is HIGH, CS# is HIGH between valid commands;
Address bus inputs are not changing during
DESELECT; DQ inputs changing once per clock cycle
216
1287
216
mA
1242
mA
*) Value calculated as one module rank in this operating condition, and all other module ranks in IDD2P (CKE LOW)
mode.
TIMING VALUES USED FOR I_DD MEASUREMENT
IDD MEASUREMENT CONDITIONS
SYMBOL
128000-CL11
CL (IDD)
11
t_RCD (IDD)
t_RC (IDD)
t_RRD (IDD)
t_CK (IDD)
t_RAS MIN (IDD)
t_RAS MAX (IDD)
t_RP (IDD)
t_RFC (IDD)
13.75
48.75
5
1.25
35
70’200
13.75
260
10600-CL9
9
13.5
49.5
6
1.5
36
70’200
13.5
260
Unit
t_CK
ns
ns
ns
ns
ns
ns
ns
ns
Swissbit AG
Industriestrasse 4
CH – 9552 Bronschhofen
Fon: [phone]
Fax: [phone]
www.swissbit.com
eMail: [e-mail]
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