AUIRFBA1405 Datasheet, PDF (5/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRFBA1405
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
20
ID = 101A
16
V_DS = 44V
V_DS = 27V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
60
120
180
240
300
Q_G, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
T_J = 175° C
100
T_J = 25° C
10
V_GS = 0 V
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V_SD ,Source-to-Drain Voltage (V)
10000
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
100
100us
1ms
10
10ms
T_C = 25°C
T_J = 175° C
Single Pulse
1
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
5