AUIRFBA1405 Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRFBA1405
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250μA
f ^{ V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA}
RDS(on)
Static Drain-to-Source On-Resistance ––– 4.3 5.0 m VGS = 10V, ID = 101A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = 10V, ID = 250μA
gfs
Forward Transconductance
69 ––– ––– S VDS = 25V, ID = 110A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 μA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 44V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
––– 170 260
ID = 101A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– 44
––– 62
66
93
f nC VDS = 44V
VGS = 10V
td(on)
Turn-On Delay Time
––– 13 –––
VDD = 38V
tr
Rise Time
––– 190 –––
ID = 110A
td(off)
Turn-Off Delay Time
tf
Fall Time
––– 130 –––
––– 110 –––
f ns RG = 1.1 
VGS = 10V
LD
Internal Drain Inductance
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
LS
Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Cis s
Input Capacitance
Cos s
Output Capacitance
Crs s
Reverse Transfer Capacitance
Cos s
Output Capacitance
Cos s
Coss eff.
Output Capacitance
g Effective Output Capacitance
Diode Characteristics
Parameter
––– 5480 –––
––– 1210 –––
––– 280 –––
––– 5210 –––
––– 900 –––
––– 1500 –––
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz, See Fig.5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ù (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
h ––– ––– 174
MOSFET symbol
D
A showing the
––– ––– 680
––– ––– 1.3
integral reverse
G
p-n junction diode.
S
f V T_J = 25°C, I_S = 101A, V_GS = 0V
–––
–––
88
250
130
380
f ^{ns TJ = 25°C, IF = 101A}
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting T_J = 25°C, L = 0.11mH
R_G = 25, I_AS = 101A. (See Figure 12).
ƒ I_SD  101A, di/dt  210A/μs, V_DD V_(BR)DSS,
T_J  175°C.
„ Pulse width  400μs; duty cycle  2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS. Refer to AN-1001.
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 95A.
‡ Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
ˆ R_ is measured at T_J of approximately 90°C.
2
www.irf.com