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AUIRF3004WL Datasheet, PDF (5/10 Pages) International Rectifier – HEXFETPower MOSFET | |||
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AUIRF3004WL
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
ÏJ ÏJ
Ï1 Ï1
R1R1
Ci= Ïi/Ri
Ci i/Ri
R2R2
Ï2 Ï2
R3R3 Ri (°C/W) Ïi (sec)
ÏCÏ 0.2063 0.017817
Ï3 Ï3
0.0394 0.000116
0.1534 0.002614
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
100
0.05
0.01
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ÎTj = 150°C and
Tstart =25°C (Single Pulse)
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ÎΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Typical Avalanche Current vs. Pulsewidth
1.0E-01
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