AUIRF3004WL Datasheet, PDF (2/10 Pages) International Rectifier – HEXFETPower MOSFET

AUIRF3004WL
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
V_GS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
40
–––
–––
–––
0.038
1.27
–––
–––
1.40
V V_GS = 0V, I_D = 250μA
g V/°C Reference to 25°C, I_D = 5mA
g _mΩ V_GS = 10V, I_D = 195A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250μA
gfs
Forward Transconductance
R_G
Internal Gate Resistance
330 ––– –––
––– 2.7 –––
S V_DS = 10V, I_D = 195A
Ω
I_DSS
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– 20
––– 250
μA
V_DS = 40V, V_GS = 0V
V_DS = 32V, V_GS = 0V, T_J = 125°C
–––
–––
––– 100
––– -100
nA
V_GS = 20V
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
Turn-On Delay Time
––– 140 210
I_D = 232A
–––
–––
–––
53
49
91
–––
–––
–––
nC
V_DS =20V
g V_GS = 10V
g I_D = 232A, V_DS =0V, V_GS = 10V
––– 19 –––
V_DD = 26V
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
––– 220 –––
––– 90 –––
––– 130 –––
ns
I_D = 232A
g ^{RG = 2.7Ω}
V_GS = 10V
C_iss
Input Capacitance
––– 9450 –––
V_GS = 0V
C_oss
Output Capacitance
––– 1930 –––
V_DS = 32V
C_rss
Reverse Transfer Capacitance
––– 975 –––
C_oss eff. (ER) _{Effective Output Capacitance (Energy Related)} ––– 2330 –––
C_oss eff. (TR) _{Effective Output Capacitance (Time Related)} ––– 2815 –––
pF ƒ = 1.0MHz, See Fig.5
i V_GS = 0V, V_DS = 0V to 32V , See Fig.11
hà V_GS = 0V, V_DS = 0V to 32V
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ãd (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
™ ^{––– –––} 386
MOSFET symbol
D
showing the
––– ––– 1544 ^A integral reverse
G
p-n junction diode.
S
––– ––– 1.3
g V T_J = 25°C, I_S = 195A, V_GS = 0V
––– 41
––– 51
62
77
ns
T_J = 25°C
T_J = 125°C
–––
–––
62
99
93
149
nC
T_J = 25°C
T_J = 125°C
V_R = 34V,
g ^{IF = 232A}
di/dt = 100A/μs
––– 2.3 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable junction _{„ ISD ≤ 232A, di/dt ≤ 907A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.}
temperature. Package limitation current is 240A. Note that current _{… Pulse width ≤ 400μs; duty cycle ≤ 2%.}
limitations arising from heating of the device leads may occur with † C_oss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.(Refer to AN-1140
as C_oss while V_DS is rising from 0 to 80% V_DSS.
http://www.irf.com/technical-info/appnotes/an-1140.pdf
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
‚ Repetitive rating; pulse width limited by max. junction
temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.018mH
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ R_θ is measured at T_J approximately 90°C.
R_G = 50Ω, I_AS = 232A, V_GS =10V. Part not recommended for use
above this value.
2
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