700D158911-590 Datasheet, PDF (4/4 Pages) List of Unclassifed Manufacturers – Power Ring Film CapacitorsTM

Power Ring Film CapacitorsTM
SBE Part 700D158911-590
Advantages of Power Ring DC Link Capacitors
• Ability to handle higher ripple currents with less
capacitance, weight, and volume
• Use of 105°C ICE coolant for power
electronics cooling
• Demonstrated MTTF >> 20,000 hours for realistic
operating conditions, due to lower losses and
better thermal performance
• Minimization of IGBT overshoot and elimination of the
need for additional snubber capacitors
• Most effective isolation of DC storage or supply
from AC switching artifacts
• Lowest industry ESL at <5nH typical with a
properly integrated bus structure
• Smaller inverter packaging
• Overall system cost savings
• Capacitance from 400 µF to 2500 µF and voltages
from 250 Vdc to 1200 Vdc
Integrating the Power Ring in an Existing Design
The “stacked” inverter design evolves from modifying
a typical automotive inverter by utilizing the excess
space left above the IGBT module (figure 1). By bend-
ing the end of the laminar bus plate, the IBGT, die,
cooling plate, and the ring capacitor are “stacked” on
top of each other in a symmetrical fashion. The ring
capacitor is placed underneath the cooling plate.
The cooling plate is shared with the IGBT module
which is mounted on the top.
Figure 1
The SBE Power Ring Film Capacitors™ utilize tradition-
ally available and economical polypropylene and poly-
ester capacitor dielectric films.However, the power
of the shape™ allows for both thermal and electrical
performance which has been unachievable in the film
capacitor industry to date.
Figure 2
Power Ring System Performance
The combination of lowest available Trise, ESR and ESL
coupled with highest ripple current handling capability
enable the development of industry leading inverter
designs with unbeatable performance and reliability.
Lowest available Trise for a given ripple current
Lowest available ESL, less than 5nH demonstrated with
optimal integrated bus
Lowest available ESR, less than 150 micro-Ohms typical
Crown terminal architecture provides for a multitude
of current paths which allows the monolithic capacitor
to function as a distributed element with a much lower
ESR than an equivalent array of smaller parts. SBE has
developed a next generation capacitor simulation tool
that allows accurate calculation of hotspot tempera-
ture to allow optimal rating with excellent reliability.
Figure 2 shows the “stacked” inverter design after the
integration of the ring capacitor and the laminar bus
plate. By now combining both aspects of vertical inte-
gration and the low temperature rise characteristics
of the capacitors, an increase to 50% or more volume
reduction is realistically possible. These improvements
clearly translate into weight and cost reductions.
SBE Inc. 81 Parker Road
Barre, Vermont 05641 USA
SBE reserves the right to amend design data
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web site: www.SBElectronics.com
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