IS62C5128BL-45QLI Datasheet, PDF (3/14 Pages) List of Unclassifed Manufacturers – 512K x 8 HIGH-SPEED CMOS STATIC RAM

IS62C5128BL, IS65C5128BL
TRUTH TABLE

Mode
WE
CE
OE I/O0-I/O7
Not Selected
X
H
X
High-Z
Output Disabled
H
L
H
High-Z
Read
H
L
L
Dout
Write
L
L
X
Din
I/O PIN
Vdd Current
Isb1, Isb2
Icc1, Icc2
Icc1, Icc2
Icc1, Icc2
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Vterm Terminal Voltage with Respect to GND
Tstg
Storage Temperature
Pt
Power Dissipation
Iout
DC Output Current (LOW)
Value
Unit
–0.5 to +7.0
V
–65 to +150
°C
1.5
W
20
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent dam-
age to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE^(1,2)
Symbol Parameter
Cin
Input Capacitance
Cout
Output Capacitance
Conditions
Vin = 0V
Vout = 0V
Max.
Unit
6
pF
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
Voh
Output HIGH Voltage Vdd = Min., Ioh = –1.0 mA
Vol
Output LOW Voltage
Vdd = Min., Iol = 2.1 mA
Vih
Input HIGH Voltage⁽¹⁾
Vil
Input LOW Voltage⁽¹⁾
Ili
Input Leakage
GND ≤ Vin ≤ Vdd
Com.
Ind.
Auto.
Ilo
Output Leakage
GND ≤ Vout ≤ Vdd
Outputs Disabled
Com.
Ind.
Auto.
Note:
1. Vill (min) = -2.0V AC (pulse width <10 ns). Not 100% tested.
Vihh (max) = Vdd + 2.0V AC (pulse width <10 ns). Not 100% tested.
Min.
2.4
—
2.2
–0.3
–1
–2
–5
–1
–2
–5
Max.
—
0.4
Vdd + 0.5
0.8
1
2
5
1
2
5
Unit
V
V
V
V
µA
µA
Integrated Silicon Solution, Inc. — www.issi.com
3
Rev.  B
06/28/2011