BC182L Datasheet, PDF (3/4 Pages) Micro Electronics – COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR

BC182L
General Purpose Transistors
Electrical Characteristics Continued (T_a = 25°C unless specified otherwise)
Parameter
Symbol
Test Condition
Minimum Typical Maximum
Dynamic Characteristics
Units
Common Base Input Capacitance
C_ib
V_BE = 0.5V, I_C = 0, f = 1MHz
-
8.0
-
pF
Small-Signal Current Gain
Noise Figure
h_fe
I_C = 2mA, V_CE = 5V, f = 1KHz
125
-
500
-
NF
V_CE = 5.0V, I_C = 0.2mA, R_s = 2.0KΩ,
f = 1KHz, F = 200Hz
-
-
10
dB
Specifications
V_CEO
(V)
V_CBO
maximum
(V)
50
60
I_C
(A)
h_FE
minimum
at I_C = 2mA
f_T
minimum
(MHz)
P_tot
(mW)
Package Part Number
0.1
120
150
350
TO-92
BC182L
Page 3
31/05/05 V1.0