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| BC182L Datasheet, PDF (2/4 Pages) Micro Electronics – COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR | |||
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BC182L
General Purpose Transistors
Absolute Maximum Ratings (Ta = 25°C unless specified otherwise)
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Power Dissipation at Ta = 25°C
Derate Above 25°C
Total Device Dissipation at TC = 25°C
Derate Above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
50
60
6.0
100
350
2.8
1.0
8
Junction Temperature
Storage Temperature
Thermal Resistance
Junction to Ambient
Junction to Case
Tj
Tstg
Rth(j-a)
Rth(j-c)
150
-55 to +150
375
125
Units
V
mA
mW
mW/°C
W
mW/°C
°C
ºC/W
Electrical Characteristics (Ta = 25°C unless specified otherwise)
Parameter
Symbol
Test Condition
Minimum Typical Maximum
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cutoff Current
Emitter-Base Leakage Current
DC Current Gain
VCEO
VCBO
VEBO
ICBO
IEBO
hFE
IC = 2mA, IB = 0
IC = 10µA, IE = 0
IE = 100µA, IC = 0
VCB = 50V, IE = 0
VEB = 4.0V, IC = 0
IC = 2mA BC182L
50
-
-
60
-
-
6
-
-
-
-
15
-
-
15
125
-
-
Collector-Emitter Saturation Voltage VCE(sat)
IC = 10mA, IB = 0.5mA
*IC = 100mA, IB = 5mA
-
-
0.25
0.6
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
VBE(sat)
VBE(on)
*IC = 100mA, IB = 5mA
IC = 100µA, VCE = 5V
IC = 2mA, VCE = 5V
*IC = 100mA, VCE = 5V
-
-
1.2
0.5
0.55
0.7
0.83
Dynamic Characteristics
Current-Gain Bandwidth Product
fT
IC = 0.5mA, VCE = 3V, f = 100MHz
IC = 10mA, VCE = 5V, f = 100MHz
150
100
-
Common Base Output Capacitance Cob
VCB = 10V, IC = 0, f = 1MHz
-
-
5.0
*Pulse Condition : Width â¤300µs, Duty Cycle â¤2%.
Units
V
nA
-
V
MHz
pF
Page 2
31/05/05 V1.0
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