AUIRFB8405 Datasheet, PDF (3/12 Pages) International Rectifier – New Ultra Low On-Resistance, Fast Switching

Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode)
V_SD
dv/dt
Diode Forward Voltage
Peak Diode Recovery 
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
AUIRFB8405
Min. Typ. Max. Units
Conditions
––– ––– 185
MOSFET symbol
A ^{showing the}
––– ––– 904
integral reverse
p-n junction diode.
D
G
S
––– 0.9 1.3 V T_J = 25°C, I_S = 100A, V_GS = 0V 
––– 1.7 ––– V/ns T_J = 175°C, I_S = 100A, V_DS = 40V
––– 44 ––– _ns T_J = 25°C
––– 45 –––
T_J = 125°C
––– 44 ––– _nC T_J = 25°C
––– 46 –––
T_J = 125°C
V_R = 34V,
I_F = 100A
di/dt = 100A/μs 
––– 1.9 ––– A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 120A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements. (Refer to AN-1140)
 Repetitive rating; pulse width limited by max. junction temperature.
 Limited by T_Jmax, starting T_J = 25°C, L = 0.036mH, R_G = 50Ω,
I_AS = 100A, V_GS =10V. Part not recommended for use above
this value.
 I_SD ≤ 100A, di/dt ≤ 1295A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
 Pulse width ≤ 400μs; duty cycle ≤ 2%.
 C_oss eff. (TR) is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS.
 C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
 R_θ is measured at T_J approximately 90°C.
 R_θJC value shown is at time zero.
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April 30, 2013