AUIRFB8405 Datasheet, PDF (2/12 Pages) International Rectifier – New Ultra Low On-Resistance, Fast Switching

AUIRFB8405
Avalanche Characteristics
E_{AS (Thermally limited)}
Single Pulse Avalanche Energy 
E_{AS (tested)}
Single Pulse Avalanche Energy Tested Value 
I_AR
Avalanche Current
E_AR
Repetitive Avalanche Energy 
Thermal Resistance
Symbol
Parameter
R_θJC
Junction-to-Case 
R_θCS
Case-to-Sink, Flat, Greased Surface
R_θJA
Junction-to-Ambient
181
247
See Fig. 14, 15, 24a, 24b
Typ.
–––
0.50
–––
Max.
0.92
–––
62
mJ
A
mJ
Units
°C/W
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V_GS(th)
Gate Threshold Voltage
I_DSS
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Internal Gate Resistance
Min. Typ. Max. Units
Conditions
40 ––– –––
––– 0.026 –––
––– 2.1 2.5
V V_GS = 0V, I_D = 250μA
V/°C Reference to 25°C, I_D = 1.0mA
mΩ V_GS = 10V, I_D = 100A 
2.2 3.0 3.9 V V_DS = V_GS, I_D = 100μA
––– ––– 1.0
––– ––– 150
μA ^{VDS = 40V, VGS = 0V}
V_DS = 40V, V_GS = 0V, T_J = 125°C
––– ––– 100 _nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– 2.3 ––– Ω
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Q_g
Q_gs
Q_gd
Q_sync
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss eff. (ER)
C_oss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q_g - Q_gd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min.
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
107
29
39
68
14
128
55
77
5193
754
519
878
1225
Max. Units
Conditions
––– S V_DS = 10V, I_D = 100A
161
I_D = 100A
–––
–––
nC
V_DS =20V
V_GS = 10V 
–––
I_D = 100A, V_DS =0V, V_GS = 10V
–––
V_DD = 26V
––– _ns I_D = 100A
–––
R_G = 2.7Ω
–––
V_GS = 10V 
–––
V_GS = 0V
–––
V_DS = 25V
––– pF ƒ = 1.0 MHz, See Fig. 5
–––
V_GS = 0V, V_DS = 0V to 32V , See Fig. 11
–––
V_GS = 0V, V_DS = 0V to 32V 
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April 30, 2013