IS42S32200L Datasheet, PDF (26/59 Pages) List of Unclassifed Manufacturers – 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

IS42S32200L, IS45S32200L
WRITE Burst
T0
T1
CLK
COMMAND WRITE
NOP
ADDRESS
BANK,
COL n
DQ DIN n
Burst length = 2 DQM ix low.
DIN n+1
T2
T3
NOP
NOP
DON'T CARE
WRITE to WRITE
T0
T1
T2
CLK
COMMAND WRITE
NOP
WRITE
ADDRESS
BANK,
COL n
BANK,
COL b
DQ DIN n
DQMx is low. Each Write Command
may be to any bank.
DIN n+1
DIN b
DON'T CARE
Random WRITE Cycles
T0
T1
T2
T3
CLK
COMMAND WRITE
WRITE
WRITE
WRITE
ADDRESS
BANK,
COL n
DQ DIN n
DQMx is low. Each Write Command
may be to any bank.
26
BANK,
COL b
DIN b
BANK,
COL m
DIN m
BANK,
COL x
DIN x
Integrated Silicon Solution, Inc. — www.issi.com
Rev.A
10/17/2012