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| AUIRFN8403 Datasheet, PDF (2/11 Pages) List of Unclassifed Manufacturers – Ultra Low On-Resistance | |||
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AUIRFN8403
Thermal Resistance
Symbol
Rï±JC (Bottom)
Rï±JC (Top)
Rï±JA
Rï±JA (<10s)
Junction-to-Case ï
Junction-to-Case ï
Junction-to-Ambient ï
Junction-to-Ambient ï
Parameter
Typ.
âââ
âââ
âââ
âââ
Max.
1.6
31
35
23
Units
°C/W
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ïV(BR)DSS/ïTJ
RDS(on)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
40 âââ âââ V VGS = 0V, ID = 250µA
âââ 26 âââ mV/°C Reference to 25°C, ID = 2.0mA
âââ 2.5 3.3 mïï VGS = 10V, ID = 50A
2.6 âââ 3.9
V VDS = VGS, ID = 100µA
âââ âââ 1.0
âââ âââ 150
µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG
Internal Gate Resistance
âââ âââ 100
âââ âââ -100
âââ 1.5 âââ
VGS = 20V
ïï VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qsync
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
159 âââ âââ
âââ 65 98
âââ 16 âââ
âââ 23 âââ
âââ 42 âââ
S VDS = 10V, ID = 50A
ID = 50A
nC
VDS = 20V
VGS = 10V
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics
âââ 11 âââ
âââ 37 âââ
âââ 33 âââ
âââ 26 âââ
âââ 3174 âââ
âââ 479 âââ
âââ 332 âââ
âââ 637 âââ
âââ 656 âââ
VDD = 20V
ns
ID = 30A
RG = 2.7ï
VGS = 10V ï
VGS = 0V
VDS = 25V
pF Æ = 1.0 MHz
VGS = 0V, VDS = 0V to 32V ï
VGS = 0V, VDS = 0V to 32V ï
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
âââ âââ 123ï
A
MOSFET symbol
showing the
ISM
Pulsed Source Current
(Body Diode) ï
âââ âââ 492
A
integral reverse
p-n junction diode.
VSD
dv/dt
trr
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
âââ 0.9 1.3 V TJ = 25°C, IS = 50A, VGS = 0V ï
âââ 1.3 âââ V/ns TJ = 175°C, IS= 50A, VDS = 40V
âââ
âââ
âââ
âââ
16
18
5.0
6.9
âââ
âââ
âââ
âââ
ns
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
VR = 34V,
IF = 50A
di/dt = 100A/µsï
âââ 0.50 âââ A TJ = 25°C
2 www.irf.com © 2015 International Rectifier
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July 8, 2015
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