AUIRFN8403 Datasheet, PDF (1/11 Pages) List of Unclassifed Manufacturers – Ultra Low On-Resistance

AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of
other applications.
Applications
 Electric Power Steering (EPS)
 Battery Switch
 Start/Stop Micro Hybrid
 Heavy Loads
 DC-DC Converter
V_DSS
R_DS(on) typ.
max
I_{D (Silicon Limited)}
I_{D (Package Limited)}
G
Gate
AUIRFN8403
HEXFET^® POWER MOSFET
40V
2.5m
3.3m
123A
95A
D
Drain
PQFN 5X6 mm
S
Source
Base Part Number
AUIRFN8403
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
AUIRFN8403TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
V_GS
E_AS
E_AS (Tested)
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy 
Avalanche Current 
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Max.
123
87
95
492
4.3
94
0.029
± 20
100
159
See Fig. 14, 15, 22a, 22b
-55 to + 175
Units
A
W
W/°C
V
mJ
A
°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2015 International Rectifier
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July 8, 2015