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| AUIRFN7107 Datasheet, PDF (2/10 Pages) List of Unclassifed Manufacturers – Ultra Low On-Resistance | |||
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AUIRFN7107
Thermal Resistance
Symbol
Parameter
Rï±JC (Bottom)
Rï±JC (Top)
Rï±JA
Rï±JA (<10s)
Junction-to-Case ï
Junction-to-Case ï
Junction-to-Ambient ï
Junction-to-Ambient ï
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
V(BR)DSS
Drain-to-Source Breakdown Voltage
75 âââ âââ
ïV(BR)DSS/ïTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
âââ 0.074 âââ
âââ 6.9 8.5
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0
RG
Internal Gate Resistance
âââ 0.82 âââ
gfs
Forward Transconductance
73 âââ âââ
IDSS
Drain-to-Source Leakage Current
âââ âââ 20
âââ âââ 250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ 100
âââ âââ -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Qg
Qgs
Qgd
Qsync
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
âââ 51 77
âââ 15 âââ
âââ 14 âââ
âââ 37 âââ
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
âââ 8.0 âââ
âââ 12 âââ
âââ 19 âââ
âââ 7.0 âââ
âââ 3001 âââ
âââ 371 âââ
âââ 151 âââ
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ï
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max.
âââ âââ 75
âââ âââ 300
âââ 0.85 1.3
âââ 28 âââ
âââ 145 âââ
Typ.
âââ
âââ
âââ
âââ
Max.
1.2
27
34
22
Units
°C/W
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
mïï VGS = 10V, ID = 45A ï
V VDS = VGS, ID = 100µA
ïï
S VDS = 25V, ID = 45A
µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Units
Conditions
ID = 45A
nC
VDS = 38V
VGS = 10V
ID = 45A, VDS =0V, VGS = 10V
VDD = 75V
ns
ID = 45A
RG = 1.8ï
VGS = 10V ï
VGS = 0V
pF VDS = 25V
Æ = 1.0 MHz
Units
Conditions
A
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C, IS = 45A, VGS = 0V ï
ns TJ = 25°C, IF = 45A, VDD = 38V
nC di/dt = 500A/µs ï
2 www.irf.com © 2014 International Rectifier
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April 14, 2014
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