AUIRFN7107 Datasheet, PDF (1/10 Pages) List of Unclassifed Manufacturers – Ultra Low On-Resistance

AUTOMOTIVE GRADE
AUIRFN7107
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon are. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this product an extremely efficient and
reliable device for use in Automotive and wide variety of
other applications.
Applications
 Injection
 Heavy Loads
 DC-DC Converter
HEXFET^® POWER MOSFET
V_DSS
R_DS(on) max
(@V_GS = 10V)
Q_{G (typical)}
I_D
(@T_{C (Bottom)} = 25°C)
75V
8.5m
51nC
75A
G
Gate
D
Drain
PQFN 5X6 mm
S
Source
Base Part Number
Package Type
Standard Pack
Form
Quantity
Complete Part Number
AUIRFN7107
PQFN 5mm x 6mm
Tape and Reel
4000
AUIRFN7107TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
V_GS
E_AS
I_AR
T_J
T_STG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy 
Avalanche Current 
Operating Junction and
Storage Temperature Range
Max.
75
14
12
75
53
300
4.4
125
0.029
± 20
123
45
-55 to + 175
Units
V
A
W
W/°C
V
mJ
A
°C
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2014 International Rectifier
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April 14, 2014