AUIRFL014N Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUIRFL014N
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– –––
V V_GS = 0V, I_D = 250μA
ΔV_(BR)DSS/ΔT_J
R_DS(on)
V_GS(th)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
0.054 –––
––– 0.16
f V/°C Reference to 25°C, ID = 1mA
Ω VGS = 10V, ID =1.9A
2.0 ––– 4.0
V V_DS = V_GS, I_D = 250μA
gfs
Forward Transconductance
1.6 ––– –––
S V_DS = 25V, I_D = 0.85A
I_DSS
Drain-to-Source Leakage Current
––– ––– 1.0
μA ^{VDS = 44V, VGS = 0V}
––– ––– 25
V_DS = 44V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
––– –––
100
nA ^{VGS = 20V}
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Q_g
Total Gate Charge
––– 7.0 11
I_D = 1.7A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– 1.2
––– 3.3
1.8
5.0
f nC VDS = 44V
V_GS = 10V, See Fig 6 and 9
t_d(on)
Turn-On Delay Time
––– 6.6 –––
V_DD = 28V
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
–––
7.1
–––
ns ^{ID = 1.7A}
––– 12 –––
––– 3.3 –––
Ãf ^{RG = 6.0 Ω}
R_D =16 Ω, See Fig.10
C_iss
Input Capacitance
––– 190 –––
V_GS = 0V
C_oss
Output Capacitance
–––
72
–––
pF VDS = 25V
C_rss
Reverse Transfer Capacitance
––– 33 –––
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
41
64
Max.
1.3
15
1.0
61
95
Units
Conditions
MOSFET symbol
A ^{showing the}
integral reverse
f ^{p-n junction diode.}
V T_J = 25°C, I_S = 1.7A, V_GS = 0V
f ^{ns TJ = 25°C, IF = 1.7A}
nC di/dt = 100A/μs
Notes:
 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
‚ V_DD = 25V, starting T_J = 25°C, L = 8.2mH, R_G = 25Ω, I_AS = 3.4A. (See Figure 12)
ƒ I_SD ≤ 1.7A, di/dt ≤ 250A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 150°C
„ Pulse width ≤ 300μs; duty cycle ≤ 2%.
… When mounted on FR-4 board using minimum recommended footprint.
† When mounted on 1 inch square copper board, for comparison with other SMD devices.
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March 26, 2014