AUIRFL014N Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUTOMOTIVE GRADE
AUIRFL014N
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 150°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
HEXFET^® Power MOSFET
D
V_(BR)DSS
55V
G
R_DS(on) max. 0.16_Ω
S
I_D
1.9A
G
Gate
D
S
D
G
SOT-223
AUIRFL014N
D
Drain
S
Source
Base part number
AUIRFL014N
Package Type
SOT-223
Standard Pack
Form
Quantity
Tube
Tape and Reel
95
2500
Orderable Part Number
AUIRFL014N
AUIRFL014NTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is
not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is
25°C, unless otherwise specified.
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 25°C
Parameter
h Continuous Drain Current, V_GS @ 10V
g Continuous Drain Current, V_GS @ 10V
g Continuous Drain Current, V_GS @ 10V
™ Pulsed Drain Current
h Power Dissipation (PCB Mount)
g Power Dissipation (PCB Mount)
g Linear Derating Factor (PCB Mount)
Max.
2.7
1.9
1.5
15
2.1
1.0
8.3
Units
A
W
W
W/°C
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
Ù Avalanche Current
™g Repetitive Avalanche Energy
e Peak Diode Recovery dv/dt
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
±20
48
1.7
0.1
5.0
-55 to + 150
V
mJ
A
mJ
V/ns
°C
Parameter
Typ.
Max.
Units
R_θJA
R_θJA
g Junction-to-Ambient (PCB mount, steady state)
h Junction-to-Ambient (PCB mount, steady state)
90
120
°C/W
50
60
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com © 2014 International Rectifier
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March 26, 2014