300P14-U Datasheet, PDF (2/5 Pages) List of Unclassifed Manufacturers – 4 Matched NPN Transistors

Document 600041 Rev 02
THAT 300
1
14
2
13
Q1 Q2
3
12
4 SUB
SUB 11
5
10
6
9
Q3 Q4
7
8
Page 2 of 5
THAT 320
1
14
2
13
Q1 Q2
3
12
4 SUB
SUB 11
5
10
6
9
Q3 Q4
7
8
THAT 300 Series Transistor Array ICs
THAT 340
1
14
2
13
Q1 Q2
3
12
4 SUB
SUB 11
5
10
6
9
Q3 Q4
7
8
Figure 1. 300 Pinout
Figure 2. 320 Pinout
Figure 3. 340 Pinout
SPECIFICATIONS¹
Absolute Maximum Ratings^2,3
NPN Collector-Emitter Voltage (BVCEO)
NPN Collector-Base Voltage (BVCBO)
PNP Collector-Emitter Voltage (BVCEO)
PNP Collector-Base Voltage (BVCBO)
Collector-Substrate Voltage (BVCS)
36 V
36V
–36 V
–36 V
± 100 V
Collector Current
Emitter Current
Operating Temperature Range (TOP)
Maximum Junction Temperature (TJMAX)
Storage Temperature (TST)
30 mA
30 mA
-40 to +85 °C
+125 °C
-45 to +125 °C
Parameter
NPN Current gain
NPN Electrical Characteristics²
Symbol
Conditions
300 / 340(Q1,Q2)
300A
300B
Units
Min Typ Max Min Typ Max Min Typ Max
hfe
VCB = 10 V, IC = 1 mA
IC = 10 µA
60 100 — 150 — — 300 — —
— 100 — — — — — — —
NPN Current Gain Matching
Δhfe
VCB = 10V, IC = 1mA
—4—— 4 —— 4 — %
NPN Noise Voltage Density
eN VCB = 10V, IC = 1 mA, 1kHz — 0.8 — — 0.9 — — 1 — nV√Hz
NPN Gain-Bandwidth Product
NPN ΔVBE
300: |VBE1-VBE2| ; |VBE3-VBE4|
340: |VBE1-VBE2|
NPN ΔIB
300: |IB1-IB2| ; |IB3-IB4|
340: |IB1-IB2|
NPN Collector-Base Leakage
Current
NPN Bulk Resistance
fT
IC = 1 mA, VCB = 10V
— 350 — — 350 — — 350 — MHz
VOS
IC = 1 mA
IC = 10 mA
— 0.5 3 — 0.5 3 — 0.5 3 mV
— 0.5 — — 0.5 — — 0.5 — mV
IOS
IC = 1 mA
IC = 10 μA
— 500 1500 — 200 600 — 100 300 nA
— 5 — — 2 — — 1 — nA
ICBO
VCB = 25 V
— 25 — — 25 — — 25 — pA
rBE V_CB = 0V, 10 μA < I_C < 10mA — 2 — —
2
—
—
2
—
Ω
NPN Base Spreading Resistance rbb
VCB = 10 V, IC = 1 mA
— 30 — — TBD — — TBD — Ω
NPN Collector Saturation Voltage VCE(SAT)
IC = 1 mA, IB = 100μA
— 0.05 — — 0.05 — — 0.05 — V
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