CEM8401 Datasheet, PDF (6/8 Pages) List of Unclassifed Manufacturers – Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

P-Channel ²⁰
16
12
-VGS=10 thru 5V
-VGS=4V
8
-VGS=3V
4
0
0
12
3
4
56
-VDS, Drain-to-Source Voltage (V)
Figure 11. Output Characteristics
CEM8401
15
-55 C
12
9
6
5
25 C
3
Tj=125 C
0
1
2
3
4
5
-VGS, Gate-to-Source Voltage (V)
Figure 12. Transfer Characteristics
1800
1500
Ciss
1200
900
600
300
0
0
5 10 15
Coss
Crss
20 25 30
-VDS, Drain-to Source Voltage (V)
Figure 13. Capacitance
1.80
ID=-4.2A
VGS=-10V
1.60
1.40
1.20
1.00
0.80
0.60
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 14. On-Resistance Variation with
Temperature
1.30
VDS=VGS
1.20
ID=-250ijA
1.10
1.00
0.90
0.80
0.70
0.60
-50 -25 0
25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 15. Gate Threshold Variation
with Temperature
5-195
1.15
ID=-250ijA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 16. Breakdown Voltage Variation
with Temperature