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CEM8401 Datasheet, PDF (1/8 Pages) List of Unclassifed Manufacturers – Dual Enhancement Mode Field Effect Transistor ( N and P Channel) | |||
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CEM8401
Feb. 2003
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
5
FEATURES
30V , 7.5A , RDS(ON)=21m⦠@VGS=10V.
RDS(ON)=30m⦠@VGS=4.5V.
-30V , -5.0A , RDS(ON)=50m⦠@VGS=-10V.
RDS(ON)=75m⦠@VGS=-4.5V.
Super high dense cell design for extremely low RDS(ON).
D1 D1 D2 D2
87 65
High power and current handing capability.
Surface Mount Package.
SO-8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa
-Pulsed
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Symbol N-Channel P-Channel Unit
VDS
30
-30
V
VGS
Ä20 Ä20
V
ID
Ä7.5 Ä5.0
A
IDM
Ä30 Ä20
A
IS
2.3 -2.3
A
PD
2.0
W
TJ, TSTG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
RįJA
62.5
C/W
5-190
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