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U631H256 Datasheet, PDF (4/13 Pages) List of Unclassifed Manufacturers – SoftStore 32K x 8 nvSRAM
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U631H256
DC Characteristics
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
Output Leakage Current
High
Low
High at Three-State- Output
Low at Three-State- Output
Symbol
Conditions
VOH
VOL
IOH
IOL
IIH
IIL
IOHZ
IOLZ
VCC
= 4.5 V
IOH
=-4 mA
IOL
= 8 mA
VCC
= 4.5 V
VOH
= 2.4 V
VOL
= 0.4 V
VCC
= 5.5 V
VIH
VIL
VCC
E or G
VOH
VOL
= 5.5 V
= 0V
= 5.5 V
≥ VIH
= 5.5 V
= 0V
Min.
2.4
8
-1
-1
Max.
Unit
V
0.4
V
-4
mA
mA
1
μA
μA
1
μA
μA
SRAM Memory Operation
No.
Switching Characteristics
Read Cycle
Symbol
Alt.
IEC
1 Read Cycle Timef
2 Address Access Time to Data Validg
3 Chip Enable Access Time to Data Valid
4 Output Enable Access Time to Data
Valid
5 E HIGH to Output in High-Zh
6 G HIGH to Output in High-Zh
7 E LOW to Output in Low-Z
8 G LOW to Output in Low-Z
9 Output Hold Time after Addr. Changeg
10 Chip Enable to Power Activee
11 Chip Disable to Power Standbyd, e
tAVAV
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tELQX
tGLQX
tAXQX
tELICCH
tEHICCL
tcR
ta(A)
ta(E)
ta(G)
tdis(E)
tdis(G)
ten(E)
ten(G)
tv(A)
tPU
tPD
Unit
Min. Max.
25
ns
25 ns
25 ns
10 ns
10 ns
10 ns
5
ns
0
ns
3
ns
0
ns
25 ns
e: Parameter guaranteed but not tested.
f: Device is continuously selected with E and G both Low.
g: Address valid prior to or coincident with E transition LOW.
h: Measured ± 200 mV from steady state output voltage.
STK Control #ML0043
4
Rev 1.0
March 31, 2006
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