GS72108ATP Datasheet, PDF (4/12 Pages) List of Unclassifed Manufacturers – 256K x 8 2Mb Asynchronous SRAM

GS72108ATP/J
Recommended Operating Conditions
Parameter
Symbol Min
Typ
Max
Unit
Supply Voltage for -7/-8/-10/-12
V_DD
3.0
3.3
3.6
V
Input High Voltage
Input Low Voltage
VIH
2.0
—
V_DD +0.3
V
VIL
–0.3
—
0.8
V
Ambient Temperature,
Commercial Range
TAc
0
—
70
o_C
Ambient Temperature,
Industrial Range
TAI
–40
—
85
o_C
Notes:
1. Input overshoot voltage should be less than V_DD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Input Capacitance
Output Capacitance
Symbol
Test Condition
Max
CIN
VIN = 0 V
5
COUT
VOUT = 0 V
7
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Symbol
Input Leakage
Current
IIL
Output Leakage
Current
ILO
Output High Voltage
VOH
Output Low Voltage
VOL
Test Conditions
VIN = 0 to V_DD
Output High Z
VOUT = 0 to V_DD
IOH = –4mA
ILO = +4mA
Min
– 1 uA
–1 uA
2.4
—
Unit
pF
pF
Max
1 uA
1 uA
—
0.4 V
Rev: 1.05 10/2004
4/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology