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GS72108ATP Datasheet, PDF (3/12 Pages) List of Unclassifed Manufacturers – 256K x 8 2Mb Asynchronous SRAM | |||
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Truth Table
CE
OE
WE
H
X
X
L
L
H
L
X
L
L
H
H
Note:
X: âHâ or âLâ
DQ1 to DQ8
Not Selected
Read
Write
High Z
GS72108ATP/J
VDD Current
ISB1, ISB2
IDD
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
Input Voltage
VDD
â0.5 to +4.6
V
VIN
â0.5 to VDD +0.5
V
(⤠4.6 V max.)
Output Voltage
VOUT
â0.5 to VDD +0.5
(⤠4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
â55 to 150
oC
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Rev: 1.05 10/2004
3/12
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
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