UGF27025 Datasheet, PDF (3/7 Pages) List of Unclassifed Manufacturers – 25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

UGF27025
AC Characteristics (Tc=25°C unless otherwise specified)
Rating
Symbol
Min
Typ Max Unit
Input capacitance * (including matching capacitor)
(V_DS=28V, V_GS=0V, f = 1MHz)
Output capacitance * (including matching capacitor)
(V_DS= 28V, V_GS=0V, f = 1MHz)
Feedback capacitance *
(V_DS=28V, V_GS=0V, f = 1MHz)
* Part is internally matched on input and output.
C_ISS
C_OSS
C_RSS
-
74
-
pF
-
352
-
pF
-
1.6
-
pF
RF and Functional Tests (In Cree Microwave Broadband Fixture, Tc=25° C unless otherwise specified)
Rating
Symbol
Min
Typ Max Unit
CW Low Power Gain, Pout=8W
V_DD=28V, I_DQ=330mA, f=2700 MHz
CW Power Gain, P_out = 25 W
V_DD=28V, I_DQ=330mA, f=2700 MHz
CW Drain Efficiency, P_out = 25 W,
f=2700 MHz, V_DD=28V, I_DQ=330mA
Two-Tone Common-Source Amplifier Power Gain
V_DD=28V, I_DQ=330mA, P_out = 25 W PEP
f₁ =2700 MHz and f₂=2700.1 MHz
Two-Tone Intermodulation Distortion
V_DD=28V, I_DQ=330mA, P_out = 25 W PEP
f₁ =2700 MHz and f₂=2700.1 MHz
Two-Tone Drain Efficiency
V_DD=28V, I_DQ=330mA, P_out = 25 W PEP
f₁ =2700 MHz and f₂=2700.1 MHz
Input Return Loss
V_DD =28V, P_out = 25 W PEP, I_DQ=330mA
f₁ =2500 MHz and 2700 MHz, Tone Spacing =
100kHz
Load Mismatch Tolerance
V_DS=28V, I_DQ= 330 mA, Pout=25W, f=2500 MHz
G_L
G_P
η_D
G_TT
I_MD
η_D2Τ
IRL
VSWR
11
12
-
dB
10
11
-
dB
34
38
-
%
10.5
11.5
-
dB
-
-30
-28 dBc
26
30
-
%
-
-
-9 dB
10:1
-
-
Ψ
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
Page 3 of 7
Specifications subject to change without notice
http://www.cree.com/
UGF27025 Rev. 1