UGF27025 Datasheet, PDF (2/7 Pages) List of Unclassifed Manufacturers – 25W, 2.7 GHz, 28V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET

Maximum Ratings
Rating
Drain to Source Voltage, Gate connected to Source
Gate to Source Voltage
Total Device Dissipation @ Tcase = 70^oC
Derate above 70^oC
Storage Temperature Range
Maximum Operating Junction Temperature
UGF27025
Symbol
V_DSS
V_GSS
P_D
T_stg
T_J
Value
65
+15 to -0.5
83.5
0.48
-65 to +150
200
Unit
Volts
Volts
Watts
W/^oC
o_C
o_C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
Θ_JC
Typical
2.1
Unit
o_C/W
Electrical DC Characteristics (Tc=25°C unless otherwise specified)
Rating
Symbol
Min
Drain to Source Breakdown Voltage
(V_GS=0, I_D=1mA)
Drain to Source Leakage current
(V_DS=28V, V_GS=0)
Gate to Source Leakage current
(V_GS=15V, V_DS=0)
Threshold Voltage
(V_DS=10V, I_D=1mA)
Gate Quiescent Voltage
(V_DS=28 V, I_D=330mA)
Drain to Source On Voltage
(V_GS=10V, I_D=1A)
Forward Transconductance
(V_DS=10V, I_D=1A)
BV_DSS
65
I_DSS
-
I_GSS
-
V_GS(th)
-
V_GS(Q)
3.0
V_DS(on)
-
Gm
1.0
Typ Max Unit
-
- Volts
-
1.0 mA
-
1.0 µA
3.5
- Volts
4.0 5.0 Volts
-
0.33 Volts
-
-
S
Page 2 of 7
Specifications subject to change without notice
http://www.cree.com/
UGF27025 Rev. 1