SSM25G45EM Datasheet, PDF (3/4 Pages) List of Unclassifed Manufacturers – N-CHANNEL INSULATED-GATE BOPOLAR TRANSISTOR

10000
1000
100
f=1.0MHz
Cies
Coes
Cres
10
1
5
9
13
17
21
25
29
VCE, Collector-Emitter Voltage (V)
Fig 7. Typical Capacitance Characterisitics
SSM25G45EM
12
11
10
I _CP =50A
V _CC =360V
9
8
7
6
5
4
3
2
1
0
0
30
60
90
120
150
Q _G , Gate Charge (nC)
Fig 8. Gate Charge Waveform
RG G
+
- ^5V
R_C
C V_CE
TO THE
OSCILLOSCOPE
225 V
E
V_GE
V_CE
90%
10%
V_GE
t_d(on) t_r
t_d(off) t_f
Fig 9. Switching Time Test Circuit
Fig 10. Switching Time Waveform
VCE
C
G
TO THE
OSCILLOSCOPE
300V
E ^VGE
+
-
1~3mA
I_G
I_C
Flasher
R_G
V_G
V_CM = 300V
C_M =100uF
V_trig
+
C_{M _} V_CM
IGBT
I_CP = 150A
V_G =5V
Fig 11. Gate Charge Test Circuit
Fig 12. Application Test Circuit
9/21/2004 Rev.2.01
www.SiliconStandard.com
3 of 4