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SSM25G45EM Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – N-CHANNEL INSULATED-GATE BOPOLAR TRANSISTOR
SSM25G45EM
N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
High input impedance
High peak current capability
4.5V gate drive
C
C
C
C
SO-8
G
E
E
E
Absolute Maximum Ratings
Symbol
Parameter
VCE
Collector-Emitter Voltage
VGE
Gate-Emitter Voltage
VGEP
Pulsed Gate-Emitter Voltage
ICP
PD @ TC=25°C1
Pulsed Collector Current
Maximum Power Dissipation
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature Range
VCE
ICP
G
Rating
450
±6
±8
150
2.5
-55 to 150
-55 to 150
450V
150A
C
E
Units
V
V
V
A
W
°C
°C
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
IGES
Gate-Emitter Leakage Current
VGE=± 6V, VCE=0V
-
-
10 µA
ICES
Collector-Emitter Leakage Current (Tj=25°C)
VCE=450V, VGE=0V
-
-
10 µA
VCE(sat)
Collector-Emitter Saturation Voltage VGE=4.5V, ICP=150A (Pulsed)
-
6
8
V
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
0.35 - 1.2 V
Qg
Total Gate Charge
IC=50A
- 64.5 - nC
Qge
Gate-Emitter Charge
VCE=360V
-
7
- nC
Qgc
Gate-Collector Charge
VGE=5V
-
30
-
nC
td(on)
Turn-on Delay Time
VCC=225V
- 11.5 -
ns
tr
Rise Time
td(off)
Turn-off Delay Time
IC=50A
RG=25Ω
- 24.5 -
ns
- 150 -
ns
tf
Fall Time
VGE=5V
-
3.3 -
µs
Cies
Input Capacitance
VGE=0V
- 2227 - pF
Coes
Output Capacitance
VCE=25V
- 200 - pF
Cres
RthJA1
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
-
79
-
pF
-
-
50 °C/W
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board ; 125°C/W when mounted on min. copper pad.
9/21/2004 Rev.2.01
www.SiliconStandard.com
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