TIC216 Datasheet, PDF (2/3 Pages) Power Innovations Ltd – SILICON TRIACS

TIC216 SERIES
SILICON TRIACS
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Gate trigger
V_GT
voltage
V_T
On-state voltage
I_H
Holding current
I_L
dv/dt
dv/dt_(c)
Latching current
Critical rate of rise of
off-state voltage
Critical rise of
commutation voltage
V_supply = +12 V†
V_supply = +12 V†
V_supply = -12 V†
V_supply = -12 V†
I_T = ±8.4 A
V_supply = +12 V†
V_supply = -12 V†
V_supply = +12 V†
V_supply = -12 V†
V_DRM = Rated V_DRM
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
R_L = 10 Ω
I_G = 50 mA
I_G = 0
I_G = 0
(see Note 6)
I_G = 0
V_DRM = Rated V_DRM I_TRM = ±8.4 A
t_p(g) > 20 µs
t_p(g) > 20 µs
t_p(g) > 20 µs
t_p(g) > 20 µs
(see Note 5)
Init’ I_TM = 100 mA
Init’ I_TM = -100 mA
T_C = 110°C
T_C = 70°C
2.2
-2.2
-2.2
3
±1.7
30
-30
4
-2
±20
V
V
mA
mA
V/µs
±2
±5
V/µs
† All voltages are with respect to Main Terminal 1.
NOTES: 5. This parameter must be measured using pulse techniques, t_p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R_G = 100 Ω, t_p(g) = 20 µs, t_r = ≤ 15 ns, f = 1 kHz.
thermal characteristics
R_θJC
R_θJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.5 °C/W
62.5 °C/W
PRODUCT INFORMATION
2
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.